Four Probe Tester RD-TZ2016Y

description1

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Overview

OVERVIEW
The device applies the Vanderbilt measurement method to the linear four-probe. By the ways of two electrical measurements under computer control, it will make analysis of the collected data in the computer and can automatically eliminate the effect of sample geometry, boundary effect, probe inequality and mechanical travel on the measurement results.

MAIN APPLICATIONS

● Semiconductor Materials Factory

● Semiconductor Device Factory

● R&D Institution

● Colleges and Universities

SPECIFICATIONS

Measurement Range	• Specific resistance:10^(-5 )-10^5Ω.cm(Expanding) • Square resistance: 10^(-4)- 10^6Ω (Expanding) • Conductivity: 10^(-5)-10^5s/cm • Resistance: 10^(-5)- 10^5Ω
Wafer Thickness	• ≤3mm
Wafer Diameter	• 140150mm / 200200mm / 400*500mm (Depends)
Constant Flow Source	• 1uA, 10uA, 100uA, 1mA, 10mA, 100mA
Digital Multimeter	• Range: 000.00-199.99mV / Definition: 10uV / Input Impedance>1000MΩ / Precision: ±0.1%

Specification

SPECIFICATIONS

Measurement Range	• Specific resistance:10^(-5 )-10^5Ω.cm(Expanding) • Square resistance: 10^(-4)- 10^6Ω (Expanding) • Conductivity: 10^(-5)-10^5s/cm • Resistance: 10^(-5)- 10^5Ω
Wafer Thickness	• ≤3mm
Wafer Diameter	• 140150mm / 200200mm / 400*500mm (Depends)
Constant Flow Source	• 1uA, 10uA, 100uA, 1mA, 10mA, 100mA
Digital Multimeter	• Range: 000.00-199.99mV / Definition: 10uV / Input Impedance>1000MΩ / Precision: ±0.1%

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